复合结构的静电感应器件  

THE STATIC INDUCTION DEVICES WITH COMPLEX STRUCTURE

作　　者：李思渊[1] 刘肃[1] 刘瑞喜[1] 杨建红[1] 

机构地区：[1]兰州大学,兰州大学物理系

出　　处：《应用科学学报》1996年第2期243-247,共5页Journal of Applied Sciences

摘　　要：复合结构的静电感应器件李思渊，刘肃，刘瑞喜，杨建红（兰州大学）关键词静电感应器件，复合结构，Ｉ～Ｖ特性表面栅结构（Ｓ－－８）和埋栅结构（ＨＳ）作为静电感应器件的基本结构已由若干作者进行过研究”－”．近几年我们采用了一种介于上述两种结构之间的结构（用０...A complex structure (C-S) which can be used in fabricating the Static Induction Devices (SID)is proposed and designed. This structural devices exhibit typical I-V characteristics and electrical performance, which are the same as those for the surface-gate and buried-gate types of SID. The experiment results indicate that C-S may be adopted as one of basic structures of SID. A prominent merit of C-S is that only ordinary planar technology is used to fabricate the SID.

关 键 词：静电感应器件 复合结构 I^V特性 

分 类 号：TN386.7[电子电信—物理电子学]