一种SiGe低噪声放大器测试基座的研究  

Development of a Test System with a Plug-in-Unit for SiGe LNA

作　　者：蒲林[1] 刘伦才[1] 李荣强[1] 刘道广[1] 张静[1] 谭开洲[1] 

机构地区：[1]模拟集成电路国家重点实验室中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2006年第5期572-575,共4页Microelectronics

摘　　要：对SiGe低噪声放大器(LNA)的测试技术进行了探索,开发出适合SiGe低噪声放大器的可插拔测试基座。通过对商业样品的增益G(S21)、增益平坦度、带宽、回波损耗(S11和S22)、反向隔离度(S12)1、dB压缩点(P1dB),三阶互调节点(IP3)和噪声系数(NF)等参数的测试,验证了测试系统的准确性。对所开发的单片SiGe低噪声放大器进行了测试,获得了准确的测试数据,准确表征了SiGe低噪声放大器的性能。An investigation was made into test techniques for SiGe low noise amplifiers （LAN＇s）. A test system with a plug-in-unit for SiGe LNA＇s was developed, and the accuracy of the test system was verified by testing parameters of a commercial sample circuit, such as gain G （S21）, gain flatness, bandwidth, echo return loss （S11 and S22）, reverse isolation （S12）, 1 dB compresion point （P1dB）, 3rd-order intermodulation point （IP3）and noise figure （NF）. A monolithic SiGe low noise amplifier was tested, and accurate test data were obtained, which correctly characterize the performance of the SiGe low noise amplifier.

关 键 词：锗硅低噪声放大器 S参数 测试基座 

分 类 号：TN407[电子电信—微电子学与固体电子学] TN722.3