纳米级MOS器件中电子直接隧穿电流的研究  

A Study on Direct Tunneling Currents in Nano-MOS Transistors

作　　者：杨红官[1] 李晓阳[1] 喻彪[1] 戴大康[1] 

机构地区：[1]湖南大学应用物理系,湖南长沙410082

出　　处：《微电子学》2006年第5期634-637,共4页Microelectronics

基　　金：湖南省青年骨干教师基金资助项目(521105237);湖南大学自然科学基金资助项目(521101805)

摘　　要：文章从分析量子力学效应对纳米级MOS器件的影响出发,采用顺序隧穿理论和巴丁传输哈密顿方法,建立了纳米级MOS器件直接隧穿栅电流的计算模型。通过和实验数据的比较,证明了该模型的有效性。计算结果表明,在纳米级MOS器件中,采用SiO2作栅介质时,1.5 nm厚度是按比例缩小的极限。该计算模型还可以用于高介电常数栅介质和多层栅介质MOS器件的直接隧穿电流的计算。Based on the analysis of quantum mechanics effects on nano-metal-oxide-semiconductor transistors （nano-MOST）, a model of direct tunneling currents is established using the sequential tunneling theory and Bardeen＇s transfer Hamiltonian formalism. A comparison of experimental data with calculation results indicates the effectiveness of this model in this work. It is shown that the oxide of nano-MOST can be scaled down to 1.5 nm. This model could also he used to calculate direct tunneling currents of MOST with high-k gate dielectrics or stacked gate dielectrics.

关 键 词：器件物理 纳米级MOS器件 直接隧穿电流 顺序隧穿 

分 类 号：TN386.1[电子电信—物理电子学]