半导体功率放大激光器耦合效率的研究  

Study on the Coupling of Laser with Semiconductor Power Amplification

作　　者：杨琏[1] 杨晓妍[1] 朱明方[2] 刘丹[1] 王征宇[1] 李松柏[1] 王安锋[1] 博报学[1] 任大翠[1] 

机构地区：[1]长春理工大学,吉林长春130022 [2]长春一汽技术中心,吉林长春130021

出　　处：《激光与红外》2006年第10期938-939,共2页Laser & Infrared

摘　　要：通过对波长808nm的GaA lAs/GaAs半导体功率放大激光器端面镀SiO减反射膜工艺过程,从理论和实验上分析了其涂层特性,透射率由无膜时的69%和32.6%提高到镀膜后的90%和80%以上,提高器件的耦合效率、输出光功率和工作寿命。The properties of coatings have been analysed theoretically and experimentally throughout the deposition process of SiO antireflection films on facets of GaAlAs/GaAs laser with semiconductor power amplification, and with a wavelength of 808 nm. The transmissivities of cavity faces have been increased from 69% and 32.6% without coatings to above 90% and 80% with coatings. The coupling efficiency of device, output power of laser and operating lifetime have been improved.

关 键 词：半导体功率放大 耦合效率 减反射膜 

分 类 号：TN248.4[电子电信—物理电子学]