室温连续工作的GaAs／AlGaAs垂直腔面发射激光器列阵  

Room Temperature CW GaAs/AlGaAs Vertical-Cavity Surface-emitting Semiconductor Lasers 2-D Arrays

作　　者：林世鸣[1] 康学军[1] 高俊华[1] 高洪海[1] 王启明[1] 王红杰[1] 王立轩 张春晖 

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室

出　　处：《高技术通讯》1996年第5期48-50,共3页Chinese High Technology Letters

基　　金：863计划资助

摘　　要：报导了由选择氧化法研制的ＧａＡｓ／ＡｌＧａＡｓ垂直腔面发射激光器，ＤＢＲ中的ＡｌＡｓ经选择氧化形成的氧化层作为有源区的横向电流限制层，器件的最低阈值电流为３．８ｍＡ，输出功率大于ｌｍＷ，发散角小于７．８°，高频测量脉冲上升沿达１００ｐｓ，并由此器件制成了２×３二维列阵。We report the GaAs/AlIGaAs vertical-cavity surface-emitting semiconductor lasers 2-D arraysfabricated by the selective oxidation. The current aperture is formed by the buried oxide layers withinmonolithic distributed Bragg reflectors. The lowest threshold 3. 8mA is achieved with a 4μm square activeregion and a continuous-wave at room temperature. The maximum outpower is great than 1mW. Itsdivergence angle is less than 7. 8° and the pulse rise time is less than 100ps when measured at highfrequency, a 2 × 3 2-D arrays is obtained.

关 键 词：垂直腔面发射 激光器 氧化法 砷化镓 ALGAAS 

分 类 号：TN248[电子电信—物理电子学]