光刻技术在PVDF压电薄膜电极制作中的应用  

Application of photoetching technology on the fabrication electrodes made PVDF piezoelectric-film

作　　者：何存富[1] 冯喜旺[1] 吴斌[1] 王秀彦[1] 李隆涛[1] 

机构地区：[1]北京工业大学机电学院,北京100022

出　　处：《传感器与微系统》2006年第10期76-78,共3页Transducer and Microsystem Technologies

基　　金：北京市教委资助项目(KZ200510005004;KM200310005012;KM200410005003)

摘　　要：为了在聚偏二氟乙烯(PVDF)压电薄膜上得到特定形状和尺寸的金电极,利用光刻技术的基本原理,分别实施了2种制备方案,即正性胶保护法和负性胶保护法。实验结果表明:负性胶保护法不能用于PVDF压电薄膜金电极的制作,而正性胶保护法能够成功地完成PVDF压电薄膜上金电极的制作,并已经成功地应用于高频超声换能器研制中。Based on the principle of phototeching technology, two different projects, namely positive resist protection and negative resist protection, are performed to realize the preparation of the golden electrodes with special shape and dimension on the PVDF piezoelectric film. The experimental results indicate that we can obtain the ideal golden electrodes only in the project of positive resist protection, not in the project of negative resist protection. The PVDF piezoelectric film with the golden electrodes can used in the manufacture of high-frequency ultrasonic sensor.

关 键 词：光刻技术 聚偏二氟乙烯 压电薄膜 电极 

分 类 号：TN305.7[电子电信—物理电子学]