不同的制作方法对ZnO-TTFT光学特性的影响  

Influence of Different Deposition Method on Optical Properties of ZnO-TTFT

作　　者：袁广才[1] 徐征[1] 张福俊[1] 王勇[1] 许洪华[2] 孙小斌[1] 

机构地区：[1]北京交通大学光电子技术研究所发光与光信息技术教育部重点实验室,北京100044 [2]辽宁大学物理系,辽宁沈阳110036

出　　处：《液晶与显示》2006年第5期510-514,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：国家自然科学基金资助项目(No.10374001;No.60576016);国家重点基础研究发展计划(No.2003CB314707);国家自然科学基金重点项目(No.10434030)

摘　　要：采用磁控溅射和电子束热蒸发方法制备了ZnO-TTFT(ZnO基透明薄膜晶体管)器件,通过XRD和透射光谱对两种不同制作方法的样品性质进行分析比较,得出采用溅射法制备的ZnO-TTFT器件有源层的ZnO薄膜从结晶化程度、表面粗糙度及透过率都较采用电子束蒸发制得的ZnO薄膜优异,制得器件的有源层有较好的c-axis(002)方向择优取向,器件的平均透过率在85%以上。研究了退火处理对器件性能的影响,发现快速热退火有利于改善薄膜的晶化,降低缺陷态密度,提高器件的透光性。A novel transparent ZnO based on transparent thin-film transistor was fabricated by rf reactive magnetron sputtering and electron beam evaporating, respectively. By comparison of the samples prepared by different deposition method through XRD and transmittance spectra, it was concluded that crystallization, surface modality and optical transmission of active layer of ZnO-TTFT device prepared by magnetron sputtering were better than those of the device fabricated by electron beam evaporating, the device had better c-axis （002） oriented of the ZnO thin film,and average optical transmittance of the device reached upwards 85 %. Anneal influence on the device was also studied, it was found that anneal is favourable for crystallization of ZnO thin film and can reduce density of defect states and increase transparent characteristics of ZnO-TTFT device.

关 键 词：薄膜晶体管 ZNO薄膜 透过率 快速热退火 

分 类 号：TN327.5[电子电信—物理电子学] TQ050[化学工程]