应力对硅悬空薄膜的机械灵敏度的影响  

The Influence of Stress on Mechanical Performance of Highly Doped Square-Shaped Silicon Diaphragm

作　　者：宋义超[1] 徐晨[1] 赵林林[1] 李博[1] 沈光地[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院

出　　处：《传感技术学报》2006年第05B期1852-1854,共3页Chinese Journal of Sensors and Actuators

基　　金：北京市人才强教计划项目资助(05002015200504)

摘　　要：运用四周固支薄板小挠度理论,分析了存在较大残余应力的浓硼重掺杂硅悬空薄膜的力学特性.给出了小挠度下,在外界载荷作用下总应力表达式和薄膜机械灵敏度表达式,并分析了残余应力对二者的影响.研究表明,对存在较大残余应力的硅薄膜,总应力和机械灵敏度主要由残余应力决定,其中机械灵敏度较忽略残余应力时的值减小三个数量级.We present an analytical solution for the total stress and mechanical sensitivity of highly boron doped Si diaphragm with small deflection considering effect to result from the residual stress. It is found that the total stress and mechanical sensitivity of the diaphragm with small deflection are decided by the residual stress in case of highly doped Si diaphragm. Especially, the mechanical sensitivity of the Si diaphragm can be three orders lower than that of the diaphragm without residual stress.

关 键 词：微电子机械系统 薄膜 总应力 机械灵敏度 残余应力 

分 类 号：TU974[建筑科学—建筑技术科学]