Pd/SnO_2/SiO_2/Si集成薄膜的结构与气敏性能  

Gas-Sensing Properties and Structure of Pd/SnO_2/SiO_2/Si Integrated Thin Films

作　　者：王磊[1] 杜军[1] 毛昌辉[1] 杨志民[1] 熊玉华[1] 

机构地区：[1]北京有色金属研究总院先进电子材料研究所,北京100088

出　　处：《传感技术学报》2006年第05B期2084-2087,2091,共5页Chinese Journal of Sensors and Actuators

摘　　要：采用磁控溅射技术制备Pd/SnO2/SiO2/Si集成薄膜.研究退火处理对薄膜微观结构和表面形貌的影响,进而测试了相关的气敏性能.实验证明,经过氧化性退火处理,集成薄膜中的SiO2层厚度从3nm增长到50nm左右,形成Pd/SnO2/SiO2/Si结构,SnO2薄膜形成金红石结构的多孔柱状晶.气敏测试表明,Pd/SnO2/SiO2/Si集成薄膜在低温区对H2、CH4、CO和C2H5OH敏感性较高,另外,随着H2气体浓度的增加,相应灵敏度从35递增至73.5.Pd/SnO2/SiO2/Si thin films, deposited by magnetron sputtering, were used to fabricate microgas sensors. Effects of heat-treatment on micro-structures and surface morphology were studied. Moreover, the gas-sensing characteristics were also measured. Pd/SnO2/SiO2/Si multi-layer structure is formed in annealing condition,and the thickness of SiO2 layer increases from 3nm to 50nm. Polycrystalline tetragonal SnO2 with the porous structure is showed in the period of annealing. The sensitivity measurements show that both of the as-deposited thin films and the annealed thin films had a strong gas-sensing properties to H2、CH4、CO and C2H5OH in low operating temperature. With the increasing of hydrogen gas concentration in the range of 100～6 000 ppm（ppm = 10^-6）, the sensitivity of annealed Pd/SnO2/SiO2/Si thin films increased from 35 to 73. 5.

关 键 词：SNO2 PD 薄膜 溅射 气体敏感 

分 类 号：TN304.2[电子电信—物理电子学]