方形重掺杂硅薄膜的极限载荷分析  

Analysis for Load Limitation of Square Shaped Boron-Doped Silicon Diaphragm

作　　者：徐晨[1] 施梦娱[1] 赵林林[1] 李博[1] 沈光地[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,光电子技术实验室北京100022

出　　处：《传感技术学报》2006年第05A期1617-1619,共3页Chinese Journal of Sensors and Actuators

基　　金：北京市人才强教计划项目资助(5002015200504)

摘　　要：考虑残余应力的情况下,薄膜在大挠度时总应力的解析表达式.通过实验观察,深腐蚀得到的浓硼重掺杂硅薄膜表面存在微蚀坑.考虑微蚀坑和残余应力的影响,运用总应力表达式和Griffith裂口强度理论,定量的得到方形浓硼重掺杂硅薄膜的最大挠度和极限载荷Pmax,与已报道的实验值相符.从而解释了浓硼重掺杂硅薄膜的实际断裂强度值远小于晶体理论断裂强度值的矛盾.可以得出,极限载荷Pmax不仅与薄膜的尺寸与形状有关,而且也与材料特性,特别是与制备工艺有关.Considering the residual stress, the total stress analytical solutions for square-shaped borondoped silicon diaphragms with large deflection are presented. With this total stress analytical solution and Griffith fracture criterion, the maximum displacement and load limitation Pmax of the square-shaped borondoped silicon diaphragms are calculated, and the results agree well with the reported experiment results. Load limitation Pmax is not only related with the shape and the dimension of diaphragms, but also dependent on material characteristics, especially the fabrication process.

关 键 词：微机械 浓硼硅薄膜 残余应力 微蚀坑 极限载荷 Griffith裂口强度理论 

分 类 号：TN306[电子电信—物理电子学]