基于压阻检测的双端固支硅纳米梁谐振特性研究  

Study on Resonance Response of Piezoresistive Double-Clamped Silicon Nano-Beam

作　　者：赵全斌[1] 焦继伟[1] 杨恒[1] 林梓鑫[1] 李铁[1] 张颖[1] 王跃林[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所传感技术国家重点实验室

出　　处：《传感技术学报》2006年第05A期1705-1708,共4页Chinese Journal of Sensors and Actuators

基　　金：973项目资助(2006CB00403)

摘　　要：我们利用压阻检测法对双端固支硅纳米梁的谐振特性进行了研究.在(111)硅衬底上,用KOH选择性腐蚀制作出了厚度约为242nm的双端固支硅纳米梁;对梁上表面采用Ar离子进行局部轰击,受轰击侧的原子结构遭到破坏,电导率显著下降,未受轰击侧原子结构则保持原掺杂结构,在梁厚度方向形成非对称掺杂,表现出压阻特性.利用该局部压阻,我们首次完成了对双端固支硅纳米梁的谐振特性的测量,其共振频率为400kHz;同时,我们对获得的低Q值进行了初步讨论.We investigate the resonant response of piezoresistive double-clamped silicon nano-beam. On Si （111） substrate, double clamped nano beam with a thickness of 242nm has been fabricated by using KOH anisotropic etching and other conventional MEMS processes. High energy Argon ion bombardment was then applied on selected area of the top side of the nano beam. The asymmetry along thickness direction resulted from top layer with partly broken bonds and the remaining unbombarded layer demonstrates its local piezoresistivity. The localized piezoresistor was used in air to characterized the resonant response of the double-clamped Si nanobeam. The resonant frequence and Q-factor were obtained, which are 400 kHz and 7.9 respectively. The energy dissipation led by damaged atomic structure has been discussed to explain the unexpected much lower Q factor.

关 键 词：双端固支硅纳米梁 压阻检测 Ar离子轰击 谐振特性 

分 类 号：TP212.12[自动化与计算机技术—检测技术与自动化装置]