以Si_3N_4作增透膜的Si基Ge量子点探测器的研究  

Si-Based Ge Quantum Dot Infrared Photodetectors with Si_3N_4 as Anti-Reflection Coating

作　　者：魏榕山[1] 邓宁[1] 王民生[1] 张爽[1] 陈培毅[1] 刘理天[1] 张璟[2] 

机构地区：[1]清华大学微电子学研究所,北京100084 [2]英国帝国理工学院Blackett实验室

出　　处：《传感技术学报》2006年第05A期1771-1774,共4页Chinese Journal of Sensors and Actuators

基　　金：国家自然科学基金重点基金资助(69836020);教育部985基金资助(JZ2001010)

摘　　要：设计并制作了以Si3N4作增透膜的Si基Ge量子点红外探测器.采用气态源分子束外延(GSMBE)方法在Si(100)衬底上生长了20层的自组织Ge量子点.在此基础上,流水制作了p-i-n结构的量子点红外探测器.为了提高探测器的响应度,采用Si3N4作为增透膜以增强探测器对入射光的吸收.用传输矩阵方法模拟的结果显示,185上nm厚的Si3N4增透膜可以使探测器在1310nm波长处具有较高的吸收率.根据此结果,用等离子体增强化学气相沉积(PECVD)方法在探测器表面淀积了185nm的Si3N4.在室温下,测得量子点探测器在1.31μm处的响应度为8.5mA/W,跟没有增透膜的器件相比,响应度提高了将近30倍.20-stacked Ge quantum dot infrared photodetectors （QDIPs） with Si3 N4 as anti-reflection coating are investigated. Ge quantum dots were grown on Si （100） by gas source molecular beam epitaxy （GSMBE）. Then p-i-n structure quantum dot infrared photodetectors were fabricated based on the materials. To improve absorptivity, then responsivity of QDIPs, transfer matrix method was used to calculate the absorptivity（at 1.31 μm） for different thickness of Sis N4 anti-reflection coating. The simulation results showed that 185nm thickness of Si3N4 provided higher absorptivity. Then 185nm Si3N4 as anti reflection coating was grown by PECVD on top of the device. At room temperature, a photocurrent responsivity of 8.5mA/W was achieved at 1.31 μm. Compared to the same structural devices without anti-reflection coating, the responsivity was greatly improved by a factor of 30.

关 键 词：增透膜 气态源分子束外延 量子点 量子点红外探测器 暗电流密度 响应度 

分 类 号：TN303[电子电信—物理电子学]