脉冲激光沉积法在多孔铝衬底上生长的ZnO薄膜的结构与光学性质  

Structural and Optical Properties of ZnO Films Deposited on Porous Anodic Alumina Substrates by Pulsed Laser Deposition

作　　者：石明吉[1] 李清山[1] 张宁[1] 赵波[1] 李修善[1] 

机构地区：[1]曲阜师范大学物理工程学院,山东曲阜273165

出　　处：《发光学报》2006年第5期755-760,共6页Chinese Journal of Luminescence

基　　金：山东省自然科学基金资助项目(Y2002A09)

摘　　要：ZnO是一种性质优良很有前途的紫外光电子器件材料,多孔铝是一种良好的模板型衬底,试图将二者结合起来以制备出一种全新的光电功能材料。制备了三种不同孔径多孔铝衬底,采用脉冲激光沉积法,在真空背景下,在多孔铝衬底上生长了氧化锌薄膜。利用扫描电子显微镜、X射线衍射和光致荧光对样品进行了测试和分析。研究表明:利用不同孔径的多孔铝衬底生长的氧化锌薄膜的结构和光学性质差异很大。样品A的光致发光主要是394nm的紫外发射和498nm的蓝绿光发射;样品B的光致发光主要是417nm的紫光发射和466nm蓝光发射;样品C的光致发光主要是415nm的紫光发射和495nm的蓝绿光发射。由于薄膜是富锌的,随着在空气中氧化的进行,光谱发生变化。利用固体能带理论对光谱进行了全面的分析。ZnO is a good ultraviolet material that can be used widely in manufacturing photoelectronic devices. It has great value of researching and using. Porous alumina is a good kind of membranous substrate. Under the guidance of energy band theory, we tried to roll them into one. The bang gap could be changed under the inluence and interaction of the porous alumina. A new energy level was created in the band gap by increasing the concentration of zinc interstitial and oxygen vacancies. So a new photoelectronic material was produced successfully. Porous alumina were formed at different voltages in different acid solutions at 0℃. Then ZnO thin film was deposited on the porous alumina substrates in vacuum by Pulsed Laser Deposition （PLD）. Several measurement techniques, including Scanning Electronic Microscopy （SEM）, X-ray Diffraction（XRD） were used to analyze the morphology characteristics, crystalline phase and the composition of film. Its photoluminescence spectra were also measured. The experimental results showed that the morphology and photoluminescence of the film grown on porous alumina of different pore diameters differ greatly. The photoluminescence peaks of the ZnO film grown on porous alumina made from sulphuric acid aqueous solution are at 394 and 498 nm. The photoluminescence peaks of the ZnO film grown on porous alumina made from The photoluminescence peaks of the ZnO film grown on solution are at 415 nm and 495 nm. Because the film was toluminescence spectrum changed when it was exposed in oxalic acid aqueous solution are, at 417 and 466 nm. porous alumina made from phosphoric acid aqueous fabricated in vacuum, it is rich in zinc and the phoair for some time. Under the guidance of solid state energy band theory, we analyzed the photoluminescence spectra successfully. It can be discerned that we had produced a new photoelectronic material that has good properties. This gives us a new way in fabricating of ZnO. We deeply believe that this kind of material will be used widely in the near fut

关 键 词：多孔铝 ZNO薄膜 光致发光 颗粒尺寸 量子限制效应 

分 类 号：O472.3[理学—半导体物理] O482.31[理学—物理]