微波反射光电导衰减法测量InGaAs吸收层的均匀性  

Uniformity Measurement of InGaAs Absorbing Layer by μ-PCD

作　　者：吕衍秋[1] 王妮丽[1] 庄春泉[1] 韩冰[1] 李向阳[1] 龚海梅[1] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室

出　　处：《半导体光电》2006年第5期551-555,共5页Semiconductor Optoelectronics

基　　金：国家自然科学基金重点资助项目(50632060)

摘　　要：外延材料的均匀性对制备大型线列和二维面阵焦平面阵列(FPA)探测器非常重要。用微波反射光电导衰减法(-μPCD)分别在300 K和85 K温度下测量了用分子束外延技术生长的p-InP/n-InGaAs/n-InP双异质结中掺杂InGaAs吸收层的载流子寿命分布图,并详细论述了这种测试技术的理论基础。在300 K和85 K时,平均寿命分别为168.2 ns和149.4 ns,结果与ZnS/n-InGaAs/n-InP的基本一致。寿命变温曲线表明,中等掺杂InGaAs载流子寿命在低温下变化较小。-μPCD法可以非接触无损伤快速测量p-InP/n-InGaAs/n-InP双异质结中InGaAs的寿命图,对于表征InGaAs吸收层的均匀性有潜在的应用,这对研制均匀性良好的InGaAs焦平面探测器非常重要。The uniformity of the epitaxial materials is very important to make large linear and two-dimensional focal plane arrays detectors. Carrier lifetime maps and distributions of doped n-InGaAs absorbing layer in MBE-grown p-InP/n-InGaAs/n-InP double-heterostructure （DH） have been measured at 300 and 85 K using the microwave photoconductivity decay （μ-PCD） technique. The theory used in this technique has been discussed in detail. The average carrier lifetimes are 168.2 and 149.4 ns at 300 and 85 K, respectively. The results are in agreement with ones of ZnS/n-InGaAs/n-InP. The temperature changing curve indicates that the lifetimes are slightly changed in the intermediate doping InGaAs at low temperature. InGaAs lifetime maps in InP/InGaAs/InP DH without contact and destruction are easily obtained by using μ-PCD technique. Therefore, it could be a potential method to characterize the uniformity of the wafers, which is necessary to fabricate InGaAs focal plane arrays（FPAs）.

关 键 词：均匀性 INGAAS 载流子寿命 焦平面阵列 μ-PCD技术 

分 类 号：TN21[电子电信—物理电子学]