Ta_2O_5的氢热处理对有机薄膜晶体管性能的影响  

Influence of Thermal Treatments of Ta_2O_5 Gate Insulator in H_2 Atmosphere on Performance of Organic Thin-Film Transistors

作　　者：彭俊彪[1] 兰林锋[1] 杨开霞[1] 牛巧丽[1] 曹镛[1] 

机构地区：[1]华南理工大学高分子光电材料及器件研究所,广东广州510640

出　　处：《华南理工大学学报（自然科学版）》2006年第10期105-108,112,共5页Journal of South China University of Technology(Natural Science Edition)

基　　金：国家自然科学基金资助项目(90201023;50573024);国家973计划项目(2002CB613405)

摘　　要：以高分子聚(2-甲氧基-5-(2-乙基-已氧基)-1,4-苯撑乙烯撑)(MEH-PPV)为半导体有源层、Ta2O5为绝缘层,制备了有机薄膜晶体管(OTFT),研究了氢热处理Ta2O5绝缘层对OTFT性能的影响,并对该器件性能改善的原因进行了分析.结果表明,经氢热处理的Ta2O5绝缘层使MEH-PPV的场效应迁移率提高了一个数量级,从1.24×10-5cm2/(V.s)提高到2.15×10-4cm2/(V.s),阈值电压有所降低.A kind of organic thin-film transistor （OTFT） was fabricated with Ta2O5 as the gate insulator and poly （2-methoxy-5- （2＇-ethyl-hexyloxy） -1,4-phenylene-vinylene） （MEH-PPV） as the active material. The influence of thermal treatment of theTa2O5 gate insulator in H2 atmosphere on the performance of OTFT was then discussed, and the reasons for the performance improvement of OTFT were analyzed. The results show that, after the thermal treatment of the Ta2O5 gate insulator in H2 atmosphere, the field effect mobility of MEH-PPV can be greatly enhanced from 1.24 ×10^-5cm^2/（ V · s） to 2.15 ×10^-4cm^2/（ V·s）, while the threshold voltage decreases.

关 键 词：有机晶体管 氧化钽 氢热处理 

分 类 号：O472.4[理学—半导体物理]