H_2对Ar稀释SiH_4等离子体CVD制备多晶硅薄膜的影响  

Effect of H_2 on polycrystalline Si films deposited by plasma-enhanced CVD using Ar-diluted SiH_4

作　　者：祁菁[1] 金晶[1] 胡海龙[1] 高平奇[1] 袁保和[1] 贺德衍[1] 

机构地区：[1]兰州大学物理系,兰州730000

出　　处：《物理学报》2006年第11期5959-5963,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10175030);高等学校优秀青年教师教学科研奖励计划资助的课题.~~

摘　　要：以SiH4,Ar和H2为反应气体,采用射频等离子体化学气相沉积方法在300℃下制备了低温多晶Si薄膜.实验发现,反应气体中H2的比例是影响薄膜结晶质量的重要因素,在适量的H2比例下制备的多晶Si薄膜具有结晶相体积分数高,氢含量低,生长速率快、抗杂质污染等特性.Low-temperature polycrystalline Si films were fabricated by radio frequency plasma-enhanced chemical vapor deposition using SiH4 , Ar and H2 as source gas. It was found that the content of H2 in the mixture plays an important role for crystallization of Si films. High-quality low-temperature polycrystalline Si films were obtained under the optimal amount of H2 in the source gas.

关 键 词：低温多晶Si薄膜 等离子体CVD Ar稀释SiH4 H2比例 

分 类 号：O484.1[理学—固体物理]