HW-MWECR-CVD法制备氢化微晶硅薄膜及其微结构研究  

Preparation and characterization of hydrogenated microcrystalline silicon films by HW-MWECR-CVD

作　　者：刘国汉[1] 丁毅[1] 朱秀红[2] 陈光华[2] 贺德衍[1] 

机构地区：[1]兰州大学物理科学与技术学院 [2]北京工业大学新型功能材料教育部重点实验室,北京100022

出　　处：《物理学报》2006年第11期6147-6151,共5页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(973)项目(批准号:G000028201);甘肃省自然科学基金(批准号:3ZS051-A25-052)资助的课题.~~

摘　　要：用热丝辅助微波电子回旋共振化学气相沉积方法制备出高晶化体积分数的氢化微晶硅(μc-Si:H)薄膜.拉曼散射和X射线衍射技术对样品的微观结构测量分析表明,当反应气体中SiH4浓度在3.6%—50%之间大范围变化时,μc-Si:H薄膜均具有高的晶化体积分数.进一步的分析表明,在SiH4浓度较大时制备的薄膜,其结构以非晶-微晶的过渡相为主.薄膜易于晶化或生长为过渡相的主要原因是微波电子回旋共振使SiH4气体高度分解,等离子体高度电离.Hydrogenated microcrystalline silicon （μc-Si： H） films with high crystalline volume fraction were deposited using a novel hot wire assisted microwave electron cyclotron resonance-chemical vapor deposition （HW-MWECR-CVD） system. The Raman scattering spectrum and X-ray diffraction measurements were carried out to characterize the microstructure of the films. It was shown that, in a wide range of silane dilution ratio, all the deposited films had high crystalline volume fractions. The transition phase from amorphous to microcrystalline silicon was more easily grown with higher silane dilution ratio, which was attributed to the higher ionization and decomposition of the source gases in HW-MWECR-CVD system than in other systems.

关 键 词：微波电子回旋共振化学气相沉积 氢化微晶硅薄膜 拉曼散射 X射线衍射 

分 类 号：O484.1[理学—固体物理]