铁电存储器集成工艺中关键技术研究进展  

Development in Integration Technology for Ferroelectric Memory Devices

作　　者：杨艳[1] 张树人[1] 刘敬松[1] 杨成韬[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《材料导报》2006年第11期104-107,共4页Materials Reports

基　　金：国家安全重大基础研究项目(51310Z)

摘　　要：铁电薄膜与半导体集成技术相结合而发展起来的铁电存储器与传统的半导体存储器相比有很多优点,其关键集成工艺技术有铁电薄膜制备技术、电极制备、刻蚀技术、氢阻技术、金属互连技术、钝化技术。简要介绍了这些工艺技术的研究现状,并讨论了相关工艺对性能的影响。Ferroelectric random access memory （FRAM） is an attractive memory device due to non-volatility, high-speed operation and low power consumption. Several integration issues for FRAM have been overcome or are being resolved by novel process technology. The key integration process technologies include ferroelectric thin film technology, electrode technology, etching technology, hydrogen harrier technology, harrier technology, and backend technology. In this paper, these integration technologies are reviewed. The effect of relative process technologies on peformance of FRAM is discussed.

关 键 词：铁电薄膜 铁电存储器 集成工艺 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]