平面型共振隧穿二极管和其组成MOBILE  

Planar Resonant Tunneling Diodes and Their MOBILE

作　　者：胡留长[1] 郭维廉[1] 张世林[1] 梁惠来[1] 姚素英[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《天津大学学报》2006年第11期1360-1363,共4页Journal of Tianjin University(Science and Technology)

基　　金：超高速专用集成电路重点实验室基金资助项目(51432010204JW1401)

摘　　要：为了解决传统台面型共振隧穿二极管制作过程中横向钻蚀问题,提出了一种采用离子注入法在N+GaAs衬底上制作平面型共振隧穿二极管,通过离子注入对器件之间进行隔离,取代了台面制作工艺中的通过湿法腐蚀隔离器件的目的.研究了它的I-V特性,测得的峰谷电流比为3.4.研究了由平面型共振隧穿二极管构成的单双稳态逻辑单元,实现了作为反相器的功能.To resolve the undercut problem in the fabrication of conventional resonant tunneling diodes, a method was proposed for the fabrication of planar resonant tunneling diodes in N ＋ GaAs substrate through ion implant. The resonant tunneling diodes were separated by ion implant instead of mesa-etching in the fabrication of conventional resonant tunneling diodes. The current-voltage characteristics were studied and the peak valley current ratio（PVCR） was 3.4. The monostable bistable logic element（MOBILE） constructed by planar resonant tunneling diodes is investigated and realizes the function of inverter.

关 键 词：平面型共振隧穿二极管 离子注入 峰谷电流比 

分 类 号：TN312.2[电子电信—物理电子学]