干氧SiO_2的氢氟酸缓冲腐蚀研究  

Wet etching of dry thermal SiO_2 with buffered hydrofluoride acid

作　　者：黄绍春[1] 江永清[2] 叶嗣荣[2] 郭林红[2] 刘晓芹[2] 赵珊[2] 

机构地区：[1]重庆邮电大学光电工程学院,重庆400065 [2]重庆光电技术研究所,重庆400060

出　　处：《桂林电子科技大学学报》2006年第5期363-365,共3页Journal of Guilin University of Electronic Technology

摘　　要：根据对掺三氯乙烯（TCE）干氧氧化的SiO2在不同配比氢氟酸缓冲腐蚀液（BHF）中的腐蚀特性的研究结果表明，在HF wt％保持不变的条件下，腐蚀速率先随着NH4F wt％的增大而上升；NH4F大于15 wt%～20wt％以后，腐蚀速率反而随之降低。值得注意的是，干氧SiO2同湿氧SiO2相比，在1wt％HF条件下，前者的腐蚀速率要比后者高，直到HF酸浓度大于3wt％时，前者的腐蚀速率才低于后者，这一现象可用NH^4＋阻挡模型结合TCE在SiO2中引入浅电子陷阱的方式得到解释。Results of a study into the etching characteristics of dry thermal trichloroethylene-growth silicon dioxide in different compositions of buffered hydrofluoride acid （BHF） are presented, They indicate that when HF wt% is constant, the etch rate of SiO2increases as NH4F wt% increases, but will turn to decrease when the NH4F exceeds a weight percentage somewhere between 15wt%-20wt%. It is worth noticing that under the condition of HF 1wt% the etch rate of dry thermal SiO2 is higher than wet-oxygen thermal silicon oxide. Only when HF〉3wt%, the etch rate of dry thermal SiO2 is lower than wet-oxygen thermal silicon oxide. This phenomenon can be explained by combining NH^4＋ blocking model with shallow electron traps introduced by TCE.

关 键 词：氢氟酸缓冲腐蚀液 干氧SiO2 湿法腐蚀 三氯乙烯 

分 类 号：TN305.3[电子电信—物理电子学]