高质量氮化镓纳米线的结构表征  

Structural characterization of high quality GaN nanowires

作　　者：李春华[1] 刘光焕[1] 梁建[1] 王晓敏[1] 许并社[1] 

机构地区：[1]太原理工大学材料科学与工程学院教育部新材料界面与工程重点实验室,山西太原030024

出　　处：《电子显微学报》2006年第5期377-380,共4页Journal of Chinese Electron Microscopy Society

基　　金：国家自然科学基金资助项目(No.20271037;No.20471041);国家自然科学基金重大研究计划(No.90306014);国家自然科学基金国际合作项目(No.50311140138);山西省留学人员科学项目(No.200523).~~

摘　　要：本文采用CVD法,以甩涂在衬底硅片上的Ga2O3薄膜和NH3作为原料,成功制备出大量GaN纳米线。采用X射线衍射仪(XRD)、场发射扫描电镜(FESEM)、能量色散谱仪(EDS)和高分辨透射电镜(HRTEM)对样品进行了成分和结构分析,并简单讨论了其生长机理。结果表明:产物为平直光滑的GaN纳米线,其直径为30nm^50nm,长度可达几十微米,纳米线为高质量的六方纤锌矿GaN晶体。Large quantity GaN nanowires were synthesized via direct reaction of the films of Ga2O3 which were coated on the Si substrate with flowing ammonia. X-ray diffraction （XRD）, field emission scanning electron microscope （FESEM） equipped with an energy dispersive spec- trometer （EDS） and high resolution transmission electron microscope （HRTEM） were used to characterize the samples. The results show that： the products were straight and smooth GaN nanowires. Their diameters were in the range of 30nm - 50nm, lengths can be up to several microns. High quality GaN nanowires are obtained with hexagonal structure.

关 键 词：CVD 氮化镓 纳米线 

分 类 号：TN304[电子电信—物理电子学] TG115.215.3[金属学及工艺—物理冶金]