Li-N-H共掺法制备p型ZnO薄膜  

Preparation of Li-N-H Codoped p-type ZnO Films

作　　者：卢洋藩[1] 叶志镇[1] 曾昱嘉[1] 陈兰兰[1] 朱丽萍[1] 赵炳辉[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《无机材料学报》2006年第6期1511-1514,共4页Journal of Inorganic Materials

基　　金：国家自然科学基金重点项目(50532060);国家自然科学基金(50572095);浙江省自然科学基金(Y405126)

摘　　要：采用Li-N-H共掺技术在玻璃衬底上生长p型ZnO薄膜．XRD结果表明共掺ZnO薄膜具有高度c轴取向,Hall测试表明薄膜的电阻率为25．2Ω·cm,Hall迁移率为0．5cm^2/(V·s),空穴浓度为4．92×10^(17)/cm^3．此外,p-ZnO薄膜在可见光区域具有90%的高透射率．Li-N-H codoped p-type ZnO films were fabricated on glass substrates by DC reactive magnetron sputtering. X-ray diffraction, Hall-effect measurement, photoluminescence spectra and transmittance spectra were used to characterize the films. The results show that the codoped films are highly c-oriented with a p-type conduction, resistivity of 25.2Ω.cm, Hall mobility of 0.5cm^2 / （V.s）, carrier density of 4.92 × 10^17cm^- 3, and transmittance of about 90%.

关 键 词：p-ZnO 磁控溅射 共掺 

分 类 号：TN304[电子电信—物理电子学] O484[理学—固体物理]