基底温度和氧分压对直流磁控溅射制备的ZnO∶Al薄膜性能的影响  

Effects of substrate temperature and oxygen partial pressure on ZAO Film by DC magnetron sputtering

作　　者：余志明[1] 伍水平[1] 魏秋平[1] 牛仕超[1] 彭传才 李京增 魏敏 

机构地区：[1]中南大学材料科学与工程学院,湖南长沙410083 [2]湖南三才光电信息材料有限公司,湖南长沙410007

出　　处：《真空》2006年第6期11-14,共4页Vacuum

摘　　要：利用直流磁控溅射法在玻璃衬底上制备了ZnO:A l(ZAO)透明导电薄膜。详细研究了沉积时的基片温度、氧分压强对膜的透光率和电阻率的影响。结果表明:ZAO薄膜具有六角纤锌矿结构且呈c轴择优取向,晶粒垂直于衬底方向柱状生长;衬底温度和氧分压对薄膜的电阻率有很大影响;基底温度对薄膜的可见光透过率影响不大,但随氧分压的增大而增大;在衬底温度为250℃、氧分压为1%时,薄膜有最优化的电阻率和平均透光率,分别达到8.35×10-4Ω.cm和85.2%。ZAO thin films were deposited on glass substrates by DC magnetron sputtering. The effects of oxygen partial pressure and substrate temperature on the resistivity and optical transmittance of the ZnO ： Al films were investigated. The X-ray diffraction revealed that ZAO film is polycrystalline with hexagonal crystal structure and has a strongly preferred orientation of c-axis perpendicular to the substrate surface. The electrical resistivity of ZAO films is obviously influenced by the substrate temperature and oxygen partial pressure. The optical transmittance of ZAO films increases with the oxygen partial pressure while it is affected a little by substrate temperature. The film, as a result, shows optimal electrical and optical properties, ie. , electrical resistivity is 8.35× 10^-4Ω , cm and optical transmittance 85.2% when the substrate is at 250℃ and the O2/Ar pressure ratio is 1%.

关 键 词：ZAO薄膜 氧分压 直流磁控溅射 电阻率 透过率 

分 类 号：TN304.21[电子电信—物理电子学] TB43[一般工业技术]