GaInNAs/GaAs量子阱结构基态光跃迁的能量  

Ground-State Transition Energy in GaInNAs/GaAs Quantum Well Structures

作　　者：杨景海[1] 杨丽丽[1] 张永军[1] 刘文彦[1] 王丹丹[1] 郎集会[1] 赵庆祥 

机构地区：[1]吉林师范大学凝聚态物理研究所 [2]查尔摩斯技术大学光电物理所

出　　处：《Journal of Semiconductors》2006年第11期1945-1949,共5页半导体学报（英文版）

基　　金：国家重点基础研究发展计划资助项目(批准号:2003CD314702-02)~~

摘　　要：从理论和实验两个方面对GaInNAs/GaAs量子阱结构基态的光跃迁能量进行研究.在理论计算过程中,分别采用电子有效质量近似法和双能级推斥模型计算了GaInNAs合金的电子空穴分立能级的能量及其带隙能,讨论了由应变引起的带隙变化量.将理论计算结果与光致发光的实验结果进行比较,两者符合得很好.并简单分析了N的加入对GaInNAs合金带隙能产生的影响.The optical transition energy in GalnNAs/GaAs QW structures is investigated from theoretical and experimental aspects. The discrete-level energy and the band-gap energy are calculated using the effective-mass approximation and two-level repulsion model ,respectively. The changes in the band-gap energy due to strains are also discussed. The theoretical and experimental transition energies of GalnNAs/GaAs quantum well structures are compared,and they agree well. The effect of N on the transition energies of GalnNAs/GaAs quantum well structures is analyzed simply.

关 键 词：量子阱 光跃迁能量 有效质量近似 分子束外延 

分 类 号：O471.1[理学—半导体物理]