GaN基LED电流扩展对其器件特性的影响  

Current expansion of GaN-based LED and its affection to the device

作　　者：孙重清[1] 邹德恕[1] 顾晓玲[1] 张剑铭[1] 董立闽[1] 宋颖娉[1] 郭霞[1] 高国[1] 沈光地[1] 

机构地区：[1]北京工业大学光电子试验室,北京100022

出　　处：《量子电子学报》2006年第6期872-875,共4页Chinese Journal of Quantum Electronics

基　　金：国家973计划(20000683-02);北京市教委项目(2002kj018);北京市科委重点项目(D0404003040221)

摘　　要：GaN基LED的表面电流扩展对于器件的特性起着很重要的作用。制作环状N电极的器件在正向电压、总辐射功率、器件老化等特性方面较普通的电极都有很大的提高。通过一系列的实验对环状N电极和普通电极进行了比较,在外加正向电流为20 mA时,正向电压减小了6%,总辐射功率也略有提高,工作50小时后,总辐射功率相差8%,验证了环状N电极结构有利于器件电流扩展,减少器件串联电阻,减少了焦耳热的产生,提高了LED电光特性和可靠性。The current expansion of Ga N-based LED is verv important to the characteristics of devices. Two kinds of devices were introduced and their merits and drawbacks were compared and the current expansion was introduced. It is pointed out that the ring-N-electrode was propitious to the current expansion and proved bv experiments. The characteristic of the ring-N-eledtrode was comparied with the common N-electrode, and there was 6% reduction at forward voltage （20 mA）. The total radiation power of the device was also improved at the same forward current. When the device worked for 50 hours, the total radiation power of the ring-electrode device was enhanced 8% compared to the traditional device. The contribution of the ring-N-electrode was proved particularly.

关 键 词：光电子学 固态照明 环状N电极 总辐射功率 电流扩展 

分 类 号：TN383[电子电信—物理电子学]