理想化学计量纳米氮化硅的制备  

Synthesis of Stoichiometric Silicon Nitride Nanopowders

作　　者：王卫乡[1] 刘颂豪 李道火[1] 刘宗才 

机构地区：[1]华南师范大学量子电子学研究所,中国科学院国际材料物理中心,中国科学院安徽光机所

出　　处：《无机材料学报》1996年第3期448-452,共5页Journal of Inorganic Materials

基　　金：国家自然科学基金;广东省高教厅重点学科和广东省自然科学基金

摘　　要：本文研究了激光诱导化学气相沉积纳米氮化硅的制备工艺过程，提出了减少游离硅的措施，利用光学二步激励法制备得到了理想化学计量的高纯纳米氮化硅粉末，其Ｎ／Ｓｉ比高达１．３２１；非常接近于理想值４／３（１．３３３）．The sythesis processes of laser-induced chemical vapour deposited nanosized silicon nitride were studied. Some measures to reduce free St in the powders were adopted. The stoichiometric silicon nitride nanopowders were synthesized by using optical double beam stimulation. The ratio of N/Si of the synthesized powder is as high as 1.321 which is very close to the ideal value of 4/3 (i.e. 1.333).

关 键 词：激光诱导 化学气相沉积 氮化硅陶瓷 陶瓷粉末 

分 类 号：O48[理学—固体物理] TQ174.758[理学—物理]