金刚石高频SAW器件中关键材料的制备研究  

Study on the Preparation of the Key Materials for High Frequency SAW Devices

作　　者：刘健敏[1] 夏义本[1] 王林军[1] 阮建锋[1] 苏青峰[1] 史伟民[1] 

机构地区：[1]上海大学材料科学与工程学院,上海200072

出　　处：《压电与声光》2006年第6期627-629,共3页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(60277024);上海市纳米专项基金资助项目(0452nm0510552nm046);上海应用材料研究与发展基金资助项目(0404);上海市重点学科基金资助项目(T0101)

摘　　要：采用热丝化学气相沉积(CVD)法制备了自支撑金刚石膜,再通过射频磁控溅射法沉积氧化锌薄膜在自支撑金刚石膜上。通过光学显微镜、扫描电镜(SEM)以及原子力显微镜(AFM)测试自支撑金刚石膜的表面形貌,结果表明,自支撑金刚石膜的成核面非常光滑,粗糙度约为10 nm;拉曼光谱显示成核面在1 333 cm-1附近有尖锐的散射峰,与金刚石的sp3键相对应,非金刚石相含量很少;X-射线衍射分析(XRD)显示,沉积在自支撑金刚石膜上的氧化锌薄膜为高度的c轴择优取向生长。Freestanding diamond film was prepared by hot filament chemical vapor deposition （HFCVD）. ZnO thin film was deposited on nucleation side of freestanding diamond film by RF reactive magnetron sputtering. The surface morphologies of freestanding diamond film had been measured by Optical microscope, Scanning electron microscopy （SEM）, Atom force microscope （AFM）. The results indicated the surface roughness of nucleation side was about 10 nm. Raman Spectra showed a sharp peak of nucleation side at 1 333 cm^-1, which was associated with sp^3 bond of diamond, the amount of non-diamond phase in the nucleation side was small. X-ray diffraction （XRD） pattern of the structure of ZnO/ Freestanding diamond film showed a sharp diffraction peak for ZnO（002）, which indicated that the sputtered as sputtered film was highly c-axis oriented.

关 键 词：自支撑金刚石膜 表面粗糙度 氧化锌薄膜 c轴择优取向 

分 类 号：TN65[电子电信—电路与系统]