注氟SIMOX隐埋SiO_2的辐照感生电荷分布特性  

Radiation Induced Charge Trapping Properties of SIMOX Buried Oxides with Supplemental Fluorine Implant

作　　者：竺士炀[1] 林成鲁 高剑侠[1] 李金华 

机构地区：[1]中国科学院上海冶金研究所信息功能材料国家重点实验室,中国科学院新疆物理研究所,江苏石油化工学院

出　　处：《Journal of Semiconductors》1996年第9期693-697,共5页半导体学报（英文版）

摘　　要：对常规工艺制备的ＳＩＭＯＸ（ＳｅｐａｒａｔｉｏｎｂｙＩＭｐｌａｎｔａｔｉｏｎｏｆＯＸｙｇｅｎ）材料，注入不同剂量的Ｆ＋并退火，其电容经（６０）Ｃｏγ射线电离辐照后平带电压漂移较小，通过同理论值相比较，说明Ｆ＋的注入减少了ＳＩＭＯＸ隐埋ＳｉＯ２层（ＢＯＸ：ＢｕｒｉｅｄＯＸｉｄｅ）的空穴陷阱浓度，增强了ＳＩＭＯＸ的抗电离辐照能力．Abstract Different dose fluorine was implanted into standard SIMOX (Separation by IM- plantation of OXygen) materials. After 60Co γ-ray ionizing irradiation,the flatband voltage shifts of their capacitance were reduced.In comparison to numerical simulation results, it shows that F+ implant reduces the concentrations of hole trap centers in SIMOX buried oxides and improves their ionizing radiation hardness.

关 键 词：注氟 SIMOX 二氧化硅 感生电荷分布 半导体材料 

分 类 号：TN304[电子电信—物理电子学]