TiO_2和SiO_2薄膜应力的产生机理及实验探索  

Study on the mechanism and measurement of stress of TiO_2 and SiO_2 thin-films

作　　者：顾培夫[1] 郑臻荣[1] 赵永江[1] 刘旭[1] 

机构地区：[1]浙江大学现代光学仪器国家重点实验室,杭州310027

出　　处：《物理学报》2006年第12期6459-6463,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60478038)资助的课题.~~

摘　　要：对最常用的TiO2和SiO2薄膜应力,包括应力模型、应力测试方法和不同实验条件下的应力测试结果作了研究.基于曲率法模型,对TiO2和SiO2单层膜和多层膜进行了实验测试,得到了一些有价值的结果,特别是离子辅助淀积和基板温度等工艺参数对薄膜应力的影响.提出了薄膜聚集密度是应力的重要因素,低聚集密度产生张应力,而高聚集密度产生压应力.在多层膜中通过调节工艺参数,适当地控制张应力或压应力,可使累积应力趋向于零.The stress of TiO2 and SiO2 thin films has been researched, including stress model, measurement method and experimental results for different preparation conditions. Based on the model of curvature of deformed substrate, the stress of the films deposited with and without ion assist as well as with different substrate temperature has been measured and some useful results for both single layers and multilayer system of TiO2 and SiO2 have been obtained. The effect of packing density of the layer on stress is found as follows： the film with lower packing density shows a tensile and that with high pacing density shows a compress stress. The accumulated stress in muhilayer system even can be diminished to zero by adjusting the preparation parameters.

关 键 词：薄膜应力 离子辅助淀积 聚集密度 

分 类 号：O484.2[理学—固体物理]