微晶硅薄膜晶体管稳定性研究  

Investigation on stability of microcrystalline silicon thin film transistors

作　　者：李娟[1] 吴春亚[1] 赵淑云[1] 刘建平[1,2] 孟志国[2] 熊绍珍[3] 张芳 

机构地区：[1]南开大学光电子薄膜器件与技术研究所,天津300071 [2]南开大学光电子薄膜器件与技术天津市重点实验室,天津301071 [3]南开大学光电信息技术科学教育部重点实验室,天津300071 [4]科学技术部高技术研究发展中心,北京100044

出　　处：《物理学报》2006年第12期6612-6616,共5页Acta Physica Sinica

基　　金：国家高技术研究发展计划(批准号:2004AA303570);国家自然科学基金重点项目(批准号:60437030);天津市自然科学基金(批准号:05YFJMJC01400);教育部留学回国人员科研启动基金资助的课题.~~

摘　　要：对有源区处于结构过渡区的微晶硅底栅薄膜晶体管,测试其偏压衰退特性时,观察到一种“自恢复”的衰退现象.当栅和源漏同时施加10V的偏压时,测试其源-漏电流随时间的变化,发现源-漏电流先衰减、而后又开始恢复上升的反常现象.而当采用栅压为10V、源-漏之间施加零偏压的模式时,源-漏电流随时间呈先是几乎指数式下降、随之是衰退速度减缓的正常衰退趋势.就此现象进行了初步探讨.Instability of a bottom gate microcrystalline silicon （μc-Si） thin film transistor （TFT）, of which the active layer was deposited by very high frequency-plasma enhanced chemical vapor deposition with silane concentration of 4% diluted by H2 , was measured and compared under two different gate bias stress conditions. A new instability phenomenon of TFT under the voltage bias stress of Vgs = Vds = 10 V was found, where the ratio of the source-drain current of μc-Si TFT to its initial value decreases first, then stays flat for a period of time, then increases. However, under the voltage bias stress of Vgs = 10 V（ Vd8 = 0 V）, the source-drain current of μc-Si TFT decreases as normal exponential decay. Analysis on the change of sub-threshold swing S and threshold voltage Vth, with stress time indicated the recoverable degradation could have resulted from the electron trapping and releasing in μc-Si TFT treated by gate-bias stress with Vds≠ 0.

关 键 词：过渡区硅材料 微晶硅薄膜晶体管 稳定性 自恢复衰退 

分 类 号：TN321.5[电子电信—物理电子学]