HgCdTe MIS器件的制备及其界面电学特性的研究(上)  

Fabrication of HgCdTe MIS Device and Study of Interface Electrical Characteristics of Passivation Films on It (Ⅰ)

作　　者：何波[1] 史衍丽[2] 徐静[3] 

机构地区：[1]昆明理工大学光电子新材料研究所,昆明650051 [2]昆明物理研究所,昆明650223 [3]济南大学材料学院,济南250022

出　　处：《红外》2006年第12期4-9,共6页Infrared

摘　　要：介绍了HgCdTe MIS器件的制备及由其C-V特性计算、分析界面电学特性的基本原理和步骤．利用MIS器件高频C-V曲线耗尽区的电学特性推导了衬底杂质浓度随深度分布的计算公式。The fabrication of HgCdTe MIS devices and the basic principle and steps for calculating and analyzing the interface electrical characteristics through their C-V curves are presented. The formulas for calculating the distribution of the impurity concentration in substrates with depth are deduced by using the electrical characteristics in the depletion region of high frequency C-V curves of the MIS devices.

关 键 词：HGCDTE MIS器件 表面钝化 界面电学特性 

分 类 号：O472[理学—半导体物理]