非平衡磁控溅射结合电弧离子镀制备掺杂DLC硬质膜性能研究  

The Properties of DLC Hard Film Prepared by Combining Unbalanced Magnetron Sputtering with Arc Plating

作　　者：于大洋[1] 马胜歌 张以忱[1] 徐路[2] 

机构地区：[1]东北大学机械学院,沈阳110004 [2]深圳国家863计划材料表面工程技术研究开发中心,深圳518029

出　　处：《中国表面工程》2006年第6期43-46,共4页China Surface Engineering

摘　　要：将非平衡磁控溅射和电弧离子镀工艺相结合,并使用霍尔离子源辅助,制备了过渡层为Cr、掺杂Ti和N的DLC薄膜。对DLC薄膜的表面形貌、内部结构、力学性能以及电学性能进行了分析测试,结果表明:膜层中含有sp2键和sp3键结构,硬度达到HV(20g)2600以上,摩擦因数接近0.1,电阻高于2MΩ。The combined unbalanced magnetron sputtering with arc plating assisted by Hall ion source was adopted to prepare Ti and N doped DLC film with a transition layer of Cr. The surface topology, microstructure, mechanical and electronic properties of DLC film were analysed. The results showed that the film contains sp^2 and sp^3 bonds. Its hardness is more than Hv（20g）2600. The friction coefficient near 0.1 and the electric resistance is over 2 MΩ.

关 键 词：硬质膜 DLC 非平衡磁控溅射 电弧离子镀 霍尔离子源 

分 类 号：O484.4[理学—固体物理] TB43[理学—物理]