射频高损耗硅基双互连线建模  

Modeling of RF Coupled Interconnects on Lossy Silicon Substrates

作　　者：金香菊[1] 朱磊[1] 尤焕成[1] 王向展[1] 杨谟华[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,四川成都610054

出　　处：《微电子学》2006年第6期732-735,共4页Microelectronics

摘　　要：针对高损耗硅衬底,采用部分元等效电路法和准静磁积分公式,将衬底涡流等效为衬底镜像电流,建立射频硅基双互连线等效电路模型。该模型考虑了趋肤效应、邻近效应和衬底损耗对互连线串联电感Ls和串联电阻Rs频率特性的制约。通过与全波分析方法对比,验证了在20 GHz范围内由该模型导出的互连线等效电感L、等效电阻R误差均在8%以内。该模型可望应用于硅基射频集成电路设计。For coupled onLchip interconnects on lossy silicon substrates, a novel physical model is proposed, which is based on the partial equivalent element circuit methodology and quasi magnetostatic integral formulation. This model takes into account the conductor skin and proximity effects, as well as the suhstrate eddy current, Com- pared with full-wave electromagnetic field simulator, the accuracy of the model is proved up to 20 GHz with an error less than 8%. The model can he used in the design of Si-hased RFIC.

关 键 词：射频 互连线 趋肤效应 邻近效应 衬底镜像电流 衬底趋肤效应 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]