磷化铟单晶衬底的缺陷控制和高质量表面制备  

Defect Control and High Quality Surface Preparation of InP Substrate

作　　者：赵有文[1] 董志远[1] 孙文荣[1] 段满龙[1] 杨子祥[1] 吕旭如[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》2006年第12期2127-2133,共7页半导体学报（英文版）

摘　　要：分析研究了一些缺陷对InP单晶衬底的影响,包括团状结构位错的产生及其对晶格完整性的影响,坑状微缺陷、晶片抛光损伤和残留杂质的清洗腐蚀等.对这些缺陷的形成原因和抑制途径进行了分析.在此基础上获得了“开盒即用(EPI-READY)”、具有良好晶格完整性、表面无损伤的InP单晶衬底抛光片.Defects and their influence on InP single crystal substrate arc investigated. Results on cluster dislocation and its deterioration on lattice perfection, pit-like micro-defects, residual damage, and impurities and their removal by cleaning are presented. Formation mechanisms of the defects and approaches to suppressing them are discussed. Finally, epi-ready InP polished single crystal wafer with high lattice perfection ,free of surface damage,is obtained.

关 键 词：磷化铟 缺陷 衬底 抛光 

分 类 号：TN305[电子电信—物理电子学]