单轴异性对氮化物半导体中浅杂质态的影响  

Influence of Uniaxial Anisotropy on Binding Energies of Shallow Impurity States in Wurtzite Nitrides

作　　者：薛亚光[1] 闫祖威[1] 

机构地区：[1]内蒙古大学理工学院物理系,呼和浩特010021

出　　处：《内蒙古大学学报（自然科学版）》2006年第6期632-635,共4页Journal of Inner Mongolia University：Natural Science Edition

基　　金：国家自然科学基金(10564003;10264003)

摘　　要：利用变分法研究纤锌矿结构氮化物半导体材料中的浅杂质态问题.采用London模型,用变分法计算浅杂质态的结合能,研究材料的单轴异性对浅杂质态的结合能的影响.对G aN,A lN和InN三种材料进行数值计算,给出了结合能随异性角(总动量与主轴之间的夹角)的变化关系,结果表明结构异性对结合能的影响显著.The shallow impurity states in wurtzite nitrides are studied by a variational method. The binding energies of shallow impurity states in wurtzite nitrides are calculated based on the London model by considering the uniaxial anisotropy. The numerical calculation is performed for GaN, AIN and InN. The binding energies as a function of anisotropic angle （the angle between the total momentum and the principal axis）is obtained. It is shown that the effect of anisotropy on the binding energy is obvious.

关 键 词：氮化物半导体 浅杂质态 结合能 单轴异性 

分 类 号：O471.3[理学—半导体物理]