微波半导体器件和能带工程研究概况  

A Survey of Investigation in Microwave Semiconductor Devices and Band Engineering

作　　者：薛舫时[1] 

机构地区：[1]半导体超晶格国家重点实验室和南京电子器件研究所,210016

出　　处：《半导体杂志》1996年第4期28-42,共15页

摘　　要：本文简要介绍了近年来微波半导体器件及集成电路的发展概况。重点阐述异质结材料生长、器件设计和工艺研究、以及微波集成电路方面的最新进展。从半导体异质结器件及其电路发展的剖析中指出了能带工程所起的重要作用。最后讨论了发展这一门新技术的要素。A survey of developing in microwave semiconductor devices and integrated circuit is given in this paper. The new advances in heterostructure material grouth, device design and technology re-search, and microwave integrated circuits are emphasized. This analysis shows out the important role of band engineering in developing of heterostructure device and its integrated circuit. Finally, the important factors involved in this new technology are discussed.

关 键 词：异质结器件 量子阱器件 微波半导体器件 

分 类 号：TN385[电子电信—物理电子学]