采用两步压强法制备优质微晶硅薄膜  

Preparation of High-quality Hydrogenated Microcrystalline Silicon Thin Films Using Two-step-pressure Method

作　　者：朱秀红[1] 陈光华[1] 刘国汉[2] 丁毅[2] 何斌[1] 张文理[1] 马占洁[1] 郜志华[1] 李志中[1] 

机构地区：[1]北京工业大学材料科学与工程学院,北京100022 [2]兰州大学物理系,兰州730000

出　　处：《人工晶体学报》2006年第6期1203-1208,共6页Journal of Synthetic Crystals

基　　金：国家重点基础研究发展计划(973)项目(No.G2000028201-1)资助课题

摘　　要：针对氢化微晶硅薄膜吸收系数较低、制备需要较高厚度,从而需要较高沉积速度的问题,考虑到压强对沉积速度及晶化比的重要影响,在分析了单一压强法制备薄膜优缺点的基础上,提出了采用两步法来制备高质量微晶硅薄膜的方法。即先采用高压制备薄膜2m in,减小非晶转微晶的孵化层厚度,然后再采用低压制备薄膜18m in,提高薄膜的致密度及减小氧含量,最后制备出了光敏性较高,晶化比较大并且光照稳定性也较好的优质氢化微晶硅薄膜。Aiming at the low absorption coefficient of hydrogenated microcrystalline silicon thin films （ μc- Si：H） and needing to be prepared with high thickness, high deposition rate must be taken into account; considering the important influence of the reaction pressure on the deposition rate and crystalline volume fraction, and based on the analysis of the advantages and disadvantages on the mono-pressure method, we promote the two-step-pressure method to prepare μc-Si：H films, i.e. at first, in order to minish the thickness of incubation layer from the amorphous phase transition to crystalline phase, we use the high pressure to deposit 2min, and then the low pressure to deposit 18min to improve the density and decrease the oxygen content of the film. As a result, the high-quality μc-Si：H films with high photosensitivity, high crystalline volume fraction and good photostability were prepared.

关 键 词：微晶硅 沉积速度 晶化比 孵化层 稳定性 

分 类 号：TQ174[化学工程—陶瓷工业]