MOCVD生长低阈值电流GaInP/AlGaInP 650nm激光器  

MOCVD Epitaxy Growth of Low Threshold GaInP/AlGaInP 650nm Laser Diodes

作　　者：夏伟[1] 王翎[2] 李树强[1] 张新 马德营[2] 任忠祥 徐现刚[2] 

机构地区：[1]山东大学信息科学与工程学院,济南250100 [2]山东大学晶体材料国家重点实验室,济南250100 [3]山东华光光电子有限公司,济南250101

出　　处：《人工晶体学报》2006年第6期1247-1250,共4页Journal of Synthetic Crystals

摘　　要：通过MOCVD外延实现了限制层高铝组分及高掺杂,制作出低阈值电流密度的压应变多量子阱激光器材料,后工艺制备了低阈值电流基横模弱折射率脊形波导激光器。该激光器阈值电流最低达到6.2mA,这是我们所见报道的650nm A lGaInP红光激光器的最低阈值电流。在25mA工作电流下,基横模连续输出功率达到18mW。Low threshold current density 650nm AlGaInP/GaInP laser diodes with compressively strained MQW active layer was successfully fabricated by MOCVD single epitaxy growth. The single mode ridge waveguide threshold current is 6.2 mA, which is the lowest threshold current ever reported for 650nm AlGaInP laser diodes as our known. At 25mA CW operation, the fundamental transverse-mode is still maintained and the output power can reach to 18mW.

关 键 词：MOCVD 低阈值电流 650nm激光器 

分 类 号：TN248[电子电信—物理电子学]