薄膜厚度对MOCVD法沉积ZnO透明导电薄膜的影响  

Effect of Film Thickness on the ZnO Thin Film as TCO Grown by MOCVD Technique

作　　者：陈新亮[1,2,3] 薛俊明[1,2,3] 孙建[1,2,3] 任慧志[1,2,3] 张德坤[1,2,3] 赵颖[1,2,3] 耿新华[1,2,3] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所,天津30071 [2]光电子薄膜器件与技术天津市重点实验室,天津300071 [3]光电信息技术科学教育部重点实验室(南开大学天津大学),天津300071

出　　处：《人工晶体学报》2006年第6期1313-1317,共5页Journal of Synthetic Crystals

基　　金：天津市自然科学基金项目(No.043604911);天津市科技攻关项目(No.043186511)

摘　　要：本文研究了薄膜厚度对MOCVD技术制备未掺杂ZnO薄膜的微观结构和电学特性影响。XRD和SEM的研究结果表明，随着薄膜厚度的增加，ZnO薄膜（110）峰趋于择优取向，且晶粒逐渐长大，薄膜从球状和细长棒状演变为具有类金字塔绒面结构特征的ZnO薄膜；Hall测量表明，较厚的ZnO薄膜有助于提高薄膜电学特性，可归于晶粒长大和晶体质量提高。40min沉积时间（膜厚为1250m）制备出的ZnO薄膜具有明显绒面结构，其晶粒尺寸为300-500m，电阻率为7．9×10^-3Q·cm，迁移率为26．8cm^2／Vs。Microstructural and electrical properties of undoped-ZnO films grown by metal organic chemical vapor deposition at different film thickness were investigated. XRD spectra and SEM images showed that （110） peak of ZnO film strengthened steadily and the grains gradually grew up with the increase of film thickness. The grain shape of the ZnO films changed from sphere-like and rod-like to pyramid-like textured morphology. Hall measurements indicated that the increased film thickness contributed to enhance the electrical properties of ZnO films resulting from the large grain. When the deposition time reached 40 minutes, undoped ZnO films presented better textured morphorlogy （ - 300-500nm） with the low resistivity （7.9 × 10^-3Ω· cm） and high electron mobility （26.8cm^2/Vs）.

关 键 词：MOCVD ZNO薄膜 透明导电氧化物 太阳电池 

分 类 号：TN304[电子电信—物理电子学]