基于氧化铪的高k栅介质纳米MOSFET栅电流模型  

Modeling of Tunneling Current Through Hf-based Dielectric Films for Nanoscale MOSFET

作　　者：王伟[1] 孙建平 顾宁[1] 

机构地区：[1]东南大学分子与生物分子电子学教育部重点实验室 [2]美国密西根大学电气工程和计算机科学系

出　　处：《固体电子学研究与进展》2006年第4期436-439,444,共5页Research & Progress of SSE

摘　　要：运用一种全量子模型研究基于氧化铪的高k栅介质纳米MOSFET栅电流,该方法特别适用于高k栅介质纳米MOS器件,还能用于多层高k栅介质纳米MOS器件。使用该方法研究了基于氧化铪高k介质氮含量等元素对栅极电流的影响。结果显示,为最大限度减少MOS器件的栅电流,需要优化介质中氮含量、铝含量。We use a quantum-mechanical model to study the gate tunneling current of Hfbased dielectric films for nanoscale MOSFET. The present approach is capable of modeling highk stack structures consisting of multiple layers of different dielectrics. Effects of nitrogen content and other element contents on the gate tunneling current have been studied theoretically. Our results show that the reduction of the gate tunneling current can be optimized in terms of the nitrogen content and aluminum content.

关 键 词：高k 栅电流 量子模型 

分 类 号：TN386[电子电信—物理电子学]