基于等效电容法对SOI器件自加热效应研究  

Research on SOI Self-heating Effect Based on the Method of Equivalent Capacitance

作　　者：高勇[1] 张新[1] 刘梦新[1] 安涛[1] 王彩琳[1] 邢昆山 

机构地区：[1]西安理工大学,西安710048 [2]华东光电集成器件研究所,安徽蚌埠233042

出　　处：《固体电子学研究与进展》2006年第4期450-455,共6页Research & Progress of SSE

摘　　要：针对目前常规SOI器件高温特性存在的问题,提出了采用等效电容法分析器件自加热效应的新观点,对抑制自加热效应原理进行了新的解析,根据埋层材料的介电常数不同,按等效电容法进行埋层厚度折算。在此基础上,提出了SOI器件的埋层新结构,并从介电常数的角度较好地验证了提出观点的正确性。最后得到,高介电常数等效埋层厚度的减小利于热泄散,高热导率的埋层材料提高了导热能力,在双重因素作用下有效抑制了自加热效应。At present normal SOI device has problem in high-temperature performance. In this paper, a new point of view is advanced via buried insulator thickness being discounted to SiO2 thickness using method of equivalent capacitance based on different dielectric constant of buried insulator materials. From another aspect, theoretical basis is perfectly explained for bringing down self-heating effect. Also,a new SOl structure with AlN as a buried insulator under the channel of device is reported,perfectly proving that the new point of view is correct from dielectric constant angles. It is concluded that the reduction of equivalent buried insulator thickness based on high dielectric constant is beneficial to conduction of heat,and high thermal conductivity of buried insulator materials improves the capacity of conduction of heat, effectively bring down self-heating effect.

关 键 词：绝缘体上的硅 埋层结构 自加热效应 介电常数 高温特性 

分 类 号：TN432[电子电信—微电子学与固体电子学]