CMOS 0.13 μm共面波导建模与特性分析  

Characteristics and Modeling of Coplanar Waveguide in 0.13 μm CMOS

作　　者：陈勖[1] 王志功[1] 李智群[1] 夏峻[1] 

机构地区：[1]东南大学射频与光电集成电路研究所,南京210096

出　　处：《固体电子学研究与进展》2006年第4期485-489,共5页Research & Progress of SSE

摘　　要：基于TSMC0．13μm CMOS工艺，对深亚微米硅基上的共面波导特性进行了研究。在分析中引入了保角映射等数值方法，给出了有效介电常数εeff、特征阻抗Z、单位电容C等传输线指标随几何参数变化的计算公式。并设计了特征阻抗分别为50Ω和70Ω的共面波导传输线元件库。采用Short—Open—Load—Thru（SOLT）校准测试技术对片上传输线元件库进行测试。在0．1～40GHz范围内，测试结果与数值分析解吻合。这为在硅基上进行RFIC设计提供了一个合理选取传输线结构的方法。The paper is on the characteristics researches of coplanar waveguide on Si substrate, especially in TSMC 0. 13 μm cMOS tehnology. Conformal mapping method is introduced into the analysis to calculate the characteristic values of the transmission line, e. g. effective permittivity εeff, characteristic impedance Z and unit capacitance C. The coplanar waveguide libraries with the Z of 50Ω and 70 Ω are designed respectively. In the measurement, the transmission line libraries are on-wafer tested with Short-Open-Load-Thru （SOLT） calibration technique. The measured characteristics show good agreement with the calculated ones at frequencies from 0.1 to 40 GHz. This work should give a reasonable way to choose the transmission line structures for designing RFIC on silicon.

关 键 词：共面波导 互补金属氧化物半导体 低阻硅 散射参数 

分 类 号：TN405[电子电信—微电子学与固体电子学]