高k值HfO_2栅介质材料电学特性的研究进展  

Research Progress in Electrical Properties of High-k HfO_2 Gate Dielectric Films

作　　者：田书凤[1] 彭英才[1] 范志东[1] 张弘[1] 

机构地区：[1]河北大学电子信息工程学院,保定071002

出　　处：《材料导报》2007年第1期22-26,共5页Materials Reports

基　　金：河北省自然科学基金(编号:503125)资助项目

摘　　要：随着Si-MOS集成电路的迅速发展,高k值栅介质材料将成为下一代MOS器件绝缘栅最有希望的候选材料。介绍了近年来HfO2栅介质材料在制备方法和电学特性方面的研究进展,提出了改善其电学特性的主要途径,其中包括非金属元素掺杂、构建组分渐变界面、设计准二元合金系统、制备堆垛积层结构、抑制界面层生长和选择适宜的电极材料等。High-k HfO2 gate dielectrics will become one of the most promising gate-insulating materials for the future of MOS devices, owing to the rapid development of Si-MOS integrated circuits. Here, the progress in the fabrication and electrical properties of HfO2 gate dielectric is described. Main approaches to improve the electrical properties of HfO2 are discussed, including doping non-metallic elements, forming constituent gradient HfO2/SiO2 interface, designing pseudobinary alloy, preparing Hf-based gate stack structure, suppressing the growth of interfacial layers and choosing the optimal electrode, etc.

关 键 词：高介电常数 HFO2栅介质 等效SiO2介电层厚度 电学特性 

分 类 号：TN386[电子电信—物理电子学]