用于光刻的EUV光源  

EUV Light Sources for LithographyZHAO Huan-yu^(1,2),ZHAO Hong-wei^1(1.Institute of Modern Physics,CAS,Lanzhou 730000,China;2.Graduate School of the Chinese Academy of Sciences,Beijing 100049,China)Abstract:The general EUV sources,discharge produced plasma

作　　者：赵环昱[1] 赵红卫[1] 

机构地区：[1]中国科学院近代物理研究所

出　　处：《半导体技术》2007年第1期12-16,共5页Semiconductor Technology

基　　金：中国科学院知识创新工程重大项目(KJCX1-09);国家杰出青年科学基金(10225523);中科院近代物理研究所所长基金资助项目(O51313.SZ0)

摘　　要：对国际上普遍采用的两种EUV光源:放电等离子体源(DPP)和激光等离子体源(LPP)进行了多方面比较。给出了两种等离子体源各自优点及难以克服的困难。基于目前的测量结果,指出了ECR等离子体有潜力成为一种新型的极紫外辐射源。The general EUV sources, discharge produced plasma （DPP） and laser produced plasma （LPP）, were compared in many respects. The virtues and challenges of each, some of which seem hard to overcome for now, were given. Based on the measurements, electron cyclotron resonance （ECR） plasma was introduced as a novel EUV source.

关 键 词：光刻 极紫外光源 放电等离子 激光等离子体 ECR等离子体 

分 类 号：TN305.7[电子电信—物理电子学]