LDMOS射频功率放大器电热记忆效应研究  

Research on the Electro-Thermal Memory Effect of LDMOS RF Power Amplifier

作　　者：冯永生[1] 刘元安[1] 

机构地区：[1]北京邮电大学电信工程学院,北京100088

出　　处：《半导体技术》2007年第1期33-36,共4页Semiconductor Technology

基　　金：高等学校博士学科点专项科研基金资助项目(20030013010)

摘　　要：以横向扩散金属氧化物半导体(LDMOS)场效应管射频功率放大器为例,介绍了LDMOS FET电热效应模型,理论推导了LDMOS FET的结温与其耗散功率的量化关系。Taking LDMOS RF power amplifier as example, electro-thermal model of LDMOS FET was introduced. The quantificational relation of chip temperature and instantaneous dissipative power of LDMOS FET in theory was derived. The cause of the electro-thermal effect of the amplifier was revealed. The results of the simulations and experiments demonstrated the influences of electrothermal memory effect on the RFPA＇ s performances, based on this general methods for reducing the memory effect are proposed.

关 键 词：横向扩散金属氧化物半导体 功率放大器 记忆效应 互调失真 

分 类 号：O471[理学—半导体物理] O453[理学—物理]