不同的氧氩比对ZnO薄膜性能的影响  

Effect of Difference O_2 to Ar Ratio on Function of ZnO Thin Film

作　　者：潘志峰[1] 袁一方[2] 李清山[3] 孔繁之[1] 张利宁[1] 

机构地区：[1]济宁医学院物理教研室,山东省济宁市272013 [2]上海理工大学光电学院,上海市200093 [3]鲁东大学校长办公室,山东省烟台市264000

出　　处：《曲阜师范大学学报（自然科学版）》2007年第1期65-68,共4页Journal of Qufu Normal University(Natural Science)

基　　金：山东省教育厅科研发展计划资助项目(03C08)

摘　　要：利用直流反应磁控溅射法在硅衬底上沉积C轴择优取向的ZnO晶体薄膜,在其他反应条件不变的情况下,改变氩氧比,测量了样品的晶体结构和导电性能.随着反应气氛中氩气含量的增加,(002)面衍射峰的强度有所提高,说明薄膜的结晶质量有所改善,衍射峰略向θ角减小的方向移动.随着反应气氛中氩气含量的增多、氧气含量的减少,ZnO薄膜的方块电阻明显减小,说明薄膜的电阻率随反应气氛中氩气的增加而明显减小.C-axis uniquely oriented ZnO films are prepared by DC reactive magnetron sputtering on （100） Si substrate, under present circumstances changes O2 to Ar ratio, which measures the crystal structure and the function of conducting electricity of the sample. The result shows that with the increasing of argon in reaction atmosphere, the intensity of （002） diffraction peak increases. This shows the crystal quality of the thin film has improved, and diffraction peak moves slightly towards the direction that angle θ decreases. With the increase of argon in reaction atmosphere and the decrease of oxygon, square resistance of thin of thin ZnO thin film decreases obviously, which shows resistivity of thin film decreases with the increase of argon in reaction atmosphere obviously.

关 键 词：ZNO薄膜 晶体结构 导电性能 氧氩比 

分 类 号：O47[理学—半导体物理]