生长在GaSb_xP_（1－x）（001）衬底上GaP的能带结构  

Energy Band Structures of Thin Strained GaP Layer on GaSbxP1-x(001) Substrate

作　　者：杨中芹[1] 徐至中[1] 张开明[1] 

机构地区：[1]复旦大学李政道物理实验室

出　　处：《固体电子学研究与进展》1996年第4期325-330,共6页Research & Progress of SSE

摘　　要：采用半经验紧束缚近似方法对生长在ＧａＳｂｘＰ１－ｘ（００１）衬底上ＧａＰ的电子能带结构进行计算。ＧａＰ为间接能隙型的半导体，计算表明，当衬底中Ｓｂ组分ｘ≥０．５７时，应变的ＧａＰ薄层由间接能隙变成直接能隙的半导体。因应变，ＧａＰ原来简并的最低Ｘ点导带能级及价带顶（Γ点）能级发生分裂。随着Ｘ增大，分裂值变大。文中最后计算了价带能级到导带底跃迁的振子强度，对发光效率作了讨论。T he energy band structures of a thin strained GaP layer Oil GaSh.P1-x (001) substrate are calculated by the semi-empirical tight-binding method in the paper. The calculated results show that the thin strained GaP layer can change its feature from an indirect gap into direct gap if the composition x is larger than 0. 57. Due to deformation, the degeneration of the lowest conduction band at X point and the top of valence band(at P point)is destroyed. The splitting values increase with the composition x. Finally, oscillator strength between the valence band and the bottom of conduction band is calculated. The light emission efficiency is also discussed.

关 键 词：紧束缚近似 直接能隙 能带结构 半导体 

分 类 号：O471.5[理学—半导体物理]