多孔硅吸收光谱的研究  

The Study of the Optical Absorption Spectrum of Porous Silicon

作　　者：晁战云[1] 唐洁影[1] 汪开源[1] 

机构地区：[1]东南大学电子工程系

出　　处：《固体电子学研究与进展》1996年第4期412-416,共5页Research & Progress of SSE

摘　　要：利用大电流剥离方法制备了多孔硅薄膜层，测定了其吸收光谱。结果发现其吸收边对应于可见光区域，同单晶硅吸收光谱相比，其吸收边发生了蓝移，并且吸收强烈。这说明多孔硅的能带结构较硅发生了改变，表现为一种新的能带结构特征。Porous silicon(PS) film is obtained by high current attack in concentrated hydrofluoric acid solution. The experimental results of the optical absorption spectrum were analyzed,which show that the absorption edge of PS is on the visible region. The PS has a srtonger optical absorption and a blue shift of the absorption edge compared with the crystal silicon. The measurement and analysis of the optical absorptoin spectrum indicate the changing of the band structure of PS.

关 键 词：多孔硅 吸收光谱 吸收系数 半导体能带结构 

分 类 号：O471.5[理学—半导体物理] TN304.12[理学—物理]