有源层厚度对非晶硅薄膜晶体管特性的影响  

The Effects of Active Layer Thickness on the Characteristics of Amorphous Silicon Thin Film Transistors

作　　者：张少强 徐重阳 邹雪城 王长安 

出　　处：《华中理工大学学报》1996年第11期61-63,共3页Journal of Huazhong University of Science and Technology

摘　　要：研究了有源层ａ－Ｓｉ∶Ｈ的厚度对ａ－Ｓｉ∶ＨＴＦＴ特性的影响．研究结果表明，ａ－Ｓｉ∶Ｈ层的厚度对ａ－Ｓｉ∶ＨＴＦＴ的静态特性（如开／关态电流比、阈值电压等）有较大的影响．理论分析表明，这是由于钝化层固定电荷在有源层背面引入了背面空间电荷层造成的．详细分析了背面空间电荷层对ａ－Ｓｉ∶ＨＴＦＴ特性的影响，提出了一个ａ－Ｓｉ∶ＨＴＦＴ有源层厚度优化设计的下限值。The effects of a Si∶H layer thickness on the characteristics of amorphous silicon transistors are studied. Experimental results show that the static characteristics of a Si∶H TFT (e.g. the On/Off state current ratio and threshold voltage) are dependent on a Si∶H thickness. This is due to the effects of the a Si∶H rear surface space charge layer caused by the fixed charge of the passivation layer. The lower limit of a Si∶H thickness for the optimal device structure is discussed, and the limit calculated is about 130 nm. Theoretical analysis is in fairly good agreement with test results.

关 键 词：非晶硅 薄膜晶体管 有源层厚度 固定电荷 

分 类 号：TN321.5[电子电信—物理电子学]