SiGe电荷注入晶体管的直流特性模型  

Mathematical model of DC characteristic of SiGe charge injection transistors

作　　者：舒斌[1] 张鹤鸣[1] 胡辉勇[1] 宣荣喜[1] 戴显英[1] 

机构地区：[1]西安电子科技大学微电子学院

出　　处：《物理学报》2007年第2期1105-1109,共5页Acta Physica Sinica

基　　金：武器装备预研基金(批准号:51408061104DZ01)资助的课题~~

摘　　要：为了能直观地体现SiGe/Si电荷注入晶体管的收集极电流与漏源电压的关系,利用输入端SiGe/Si量子阱中二维空穴气的隧道模型,建立起此类器件的输入输出数学模型,并利用MATLAB软件对所建模型进行了模拟,结果显示在漏源电压约为1.5V时,漏电流出现较强的负微分电阻效应,与文献报道结果符合.To visualize the relationship between the collector current and source-drain voltage in the SiGe/Si chare injection transistor （CHINT）, the mathematical model of this device is set up by using the tunnel model of two-dimensional hole gas（2DHG） in SiGe/Si quantum well. Then the model is simulated by MATLAB, the result shows that the drain current shows strong negative differential resistance when VDS is about 1.SV, which is in accordance with the results of the other papers.

关 键 词：SIGE/SI异质结 电荷注入晶体管 二维空穴气 隧道效应 

分 类 号：TN32[电子电信—物理电子学]